Hafsa Ameziane

PhD Student

I will be doing my thesis in C2N in SEEDs team on Growth of hexagonal crystal phase SiGe nanowires on m-plane substrates for integration of quantum electronics and photonics. The SiGe-2H phase has a direct band gap and excellent light-emitting capabilities with a tunable mid-infrared emission wavelength between 1.8 and 4.2 μm in a concentration range of 0 to 40% Si. In this thesis project, I will study the growth of  <1-100> oriented SiGe 2H nanowires using in situ and real-time TEM observations at the atomic scale and understand the growth mechanisms by comparing Vapor-Solid-Solid (VSS) and Vapor-Liquid-Solid (VLS) growth modes. Then my research will focus on nanowire doping and Ge quantum dots growth in a Si-rich SiGe hexagonal nanowire.

Growth of a Ge-2H branch on a wurtzite GaAs nanowire trunk. The HR-TEM images show the hexagonal crystal structure of the branch.



Internship in institut Jean lamour

 Electrochemical elaboration and characterization of SnS type films

Picardie Jules Verne University

M2 Physics and Engineering of Nanomaterials









Email address


Office number

10 Bd Thomas Gobert
91120 Palaiseau  FRANCE

Phone number
+33 1 70 27 04 88


Research areas

  • Growth mechanisms
  • In-situ TEM observations