Hafssa Ameziane

I will be doing my thesis in C2N in SEEDs team on Growth of hexagonal crystal phase SiGe nanowires on m-plane substrates for integration of quantum electronics and photonics. The SiGe-2H phase has a direct band gap and excellent light-emitting capabilities with a tunable mid-infrared emission wavelength between 1.8 and 4.2 μm in a concentration range of 0 to 40% Si. In this thesis project, I will study the growth of  <1-100> oriented SiGe 2H nanowires using in situ and real-time TEM observations at the atomic scale and understand the growth mechanisms by comparing Vapor-Solid-Solid (VSS) and Vapor-Liquid-Solid (VLS) growth modes. Then my research will focus on nanowire doping and Ge quantum dots growth in a Si-rich SiGe hexagonal nanowire.