Allotropism in group-IV semiconductors
The SEEDs team intends to use and promote epitaxy by UHV-CVD and CBE for monolithic integration on silicon with the aim to lay out and spread innovative and disruptive heterostructures. Our activities include either the synthesis of III-V materials as well as novel allotrope structures of group-IV semiconductors for integration in electronic and photonic devices on silicon. We focus on the comprehension of growth mechanisms and the investigation of the physical properties of epitaxial heterostructures.
May 2021: Starting OPTOSILICON FETOPEN project
June 2020: First CBE heterostructure grown at C2N new site
March 2020 : Starting CNRS MITI Project EPITHEX
FEB 2019 : First MOCVD growth at NANOMAX TEM facility