Thomas Dursap


Thomas Dursap obtained his Ph. D. degree in material science from the Ecole Centrale de Lyon in 2022. His thesis work was performed at the Lyon Institut of Nanotechnology in the Functional material and Nanostructure team, where he investigated the use of reflective high energy electron diffraction (RHEED) system to control the growth of self-assisted GaAs nanowires by molecular beam epitaxy (MBE). In parallel, he studied the potential application of these nanowires for the water splitting reaction, in order to generate H2. These works allowed him to acquire experience in electron microscopy, developing skills on STEM instrument for high-resolution imaging and electron energy loss spectroscopy (EELS) measurements.

After his Ph. D., Thomas Dursap joined the SEEDs team at the C2N in Palaiseau as a post-doctoral fellow, where he takes part to the elaboration of 2H-Ge material by UHV-CVD and its characterization using EELS measurements. His post-doctoral studies also involved experiments performed in the EQUIPEX TEMPO NANOMAX, an in situ TEM where the growth mechanisms of GaAs nanowires, 2H-Ge and SiGe structures are studied.




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Email address

10 Bd Thomas Gobert
91120 Palaiseau  FRANCE

Research areas

  • Advanced heterostructure epitaxy
  • polytypism in nanowires