Charles Renard

CNRS Researcher (CRCN)

Charles RENARD received the Ph.D. degree in materials sciences from Denis Diderot University, Paris, France, in 2005. His Ph.D. work has been done at Alcatel-Thales III-V Lab and dealt with antimonide/arsenide heterostructures for optoelectronic applications in the mid infrared. During this experience he was in charge of development of Quantum Cascade Lasers (QCLs) and detector based on III-V materials by MBE. Then he spent two years as a post-doctoral fellow at the Institut d’Electronique Fondamentale (IEF), Orsay, where he was in charge of UHV-CVD growth of nanostructures for ultimate MOSFET. In 2008 he spent 6 months in Belgium at IMEC, within the Ge III-V explore program. During this stay he was in charge of developing III-V material integration on GeOI substrate by MBE, for C-MOS sub-15nm devices. Since 2008, he is researcher at IEF where he is working on growth of IV-IV materials on Si substrate for hybrid integration. Since 2012, he has enlarged the skills of the SEEDs team by developing the epitaxial growth of III-V materials on Si. He is also involved in the EQUIPEX TEMPOS NANOMAX, where his role was initially to participate in the definition of the specifications of the microscope and the instrumental development (gas injection, design of the gas cabinet and treatment of toxic gaseous effluents) for the CVD growth of Si, Ge, and GaAs nano-objects. Since February 2019 he participates to the in situ CVD growth in the TEM. Charles Renard became, at the end of 2012, the team leader of the SEEDs team of C2N. Charles RENARD is author and co-author of more than 50 articles in international peer-reviewed journals, 4 patents and 10 invited talks.

Publications

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